IndiumV3, Main, Repository, bibRecord, 003157

Effect of H2S treatment on properties of CuInS2 thin films deposited by chemical spray pyrolysis at low temperature

Identifieur interne : 003157 ( Main/Repository ); précédent : 003156; suivant : 003158

Effect of H2S treatment on properties of CuInS2 thin films deposited by chemical spray pyrolysis at low temperature

Auteurs : RBID : Pascal:11-0433222

Descripteurs français

Pascal (Inist)
- Sulfure d'hydrogène, Cellule solaire, Couche mince, Pyrolyse, Solution aqueuse, Chlorure d'indium, Thiourées, Recuit, Diffraction RX, Spectrométrie dispersive, Spectre photoélectron RX, Spectrométrie Raman, Epaisseur couche, Cristallite, Sulfure de cuivre, Sulfure d'indium, Chlorure de cuivre, Thiourée, Chalcopyrite, Mécanisme croissance, Traitement thermique, CuInS2, InCl3, 8460J, 6855J, 6855A, 8115A.

English descriptors

KwdEn :
- Annealing, Aqueous solution, Chalcopyrite, Copper chloride, Copper sulfide, Crystallites, Dispersive spectrometry, Growth mechanism, Heat treatment, Hydrogen sulfides, Indium chloride, Indium sulfide, Layer thickness, Pyrolysis, Raman spectrometry, Solar cell, Thin film, Thiourea, Thioureas, X ray diffraction, X-ray photoelectron spectra.

Abstract

CuInS₂ thin films were deposited by chemical spray of aqueous solutions containing CuCl₂, InCl₃ and thiourea at substrate temperature of 250 °C in air and subjected to annealing at 530 °C in H₂S atmosphere. Structure and composition before and after annealing were studied by XRD, EDS, XPS and Raman spectroscopy. As-sprayed films were low-crystalline, showed uniform distribution of elements in film thickness and no oxygen content. For the CuInS₂ films deposited from the solutions with [Cu²⁺]/[In³⁺] = 1.0 and 1.1, H₂S treatment for 30 min increased the chalcopyrite content up to 73% and 51%, respectively. Cu_xS phase in sprayed CIS films promotes the crystallite growth but retards the formation of chalcopyrite phase during H₂S treatment.

Links toward previous steps (curation, corpus...)

to stream Main, to step Corpus: 002835

Links to Exploration step

Pascal:11-0433222

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Effect of H2S treatment on properties of CuInS2 thin films deposited by chemical spray pyrolysis at low temperature</title>
<author><name sortKey="K Rber, E" uniqKey="K Rber E">E. K Rber</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5</s1>
<s2>19086 Tallinn</s2>
<s3>EST</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Estonie</country>
<wicri:noRegion>19086 Tallinn</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Katerski, A" uniqKey="Katerski A">A. Katerski</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5</s1>
<s2>19086 Tallinn</s2>
<s3>EST</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Estonie</country>
<wicri:noRegion>19086 Tallinn</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Oja Acik, I" uniqKey="Oja Acik I">I. Oja Acik</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5</s1>
<s2>19086 Tallinn</s2>
<s3>EST</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Estonie</country>
<wicri:noRegion>19086 Tallinn</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Mikli, V" uniqKey="Mikli V">V. Mikli</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Centre for Materials Research, Tallinn University of Technology, Ehitajate tee 5</s1>
<s2>19086 Tallinn</s2>
<s3>EST</s3>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Estonie</country>
<wicri:noRegion>19086 Tallinn</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Mere, A" uniqKey="Mere A">A. Mere</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5</s1>
<s2>19086 Tallinn</s2>
<s3>EST</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Estonie</country>
<wicri:noRegion>19086 Tallinn</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Krunks, M" uniqKey="Krunks M">M. Krunks</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5</s1>
<s2>19086 Tallinn</s2>
<s3>EST</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Estonie</country>
<wicri:noRegion>19086 Tallinn</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">11-0433222</idno>
<date when="2011">2011</date>
<idno type="stanalyst">PASCAL 11-0433222 INIST</idno>
<idno type="RBID">Pascal:11-0433222</idno>
<idno type="wicri:Area/Main/Corpus">002835</idno>
<idno type="wicri:Area/Main/Repository">003157</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0040-6090</idno>
<title level="j" type="abbreviated">Thin solid films</title>
<title level="j" type="main">Thin solid films</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Annealing</term>
<term>Aqueous solution</term>
<term>Chalcopyrite</term>
<term>Copper chloride</term>
<term>Copper sulfide</term>
<term>Crystallites</term>
<term>Dispersive spectrometry</term>
<term>Growth mechanism</term>
<term>Heat treatment</term>
<term>Hydrogen sulfides</term>
<term>Indium chloride</term>
<term>Indium sulfide</term>
<term>Layer thickness</term>
<term>Pyrolysis</term>
<term>Raman spectrometry</term>
<term>Solar cell</term>
<term>Thin film</term>
<term>Thiourea</term>
<term>Thioureas</term>
<term>X ray diffraction</term>
<term>X-ray photoelectron spectra</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Sulfure d'hydrogène</term>
<term>Cellule solaire</term>
<term>Couche mince</term>
<term>Pyrolyse</term>
<term>Solution aqueuse</term>
<term>Chlorure d'indium</term>
<term>Thiourées</term>
<term>Recuit</term>
<term>Diffraction RX</term>
<term>Spectrométrie dispersive</term>
<term>Spectre photoélectron RX</term>
<term>Spectrométrie Raman</term>
<term>Epaisseur couche</term>
<term>Cristallite</term>
<term>Sulfure de cuivre</term>
<term>Sulfure d'indium</term>
<term>Chlorure de cuivre</term>
<term>Thiourée</term>
<term>Chalcopyrite</term>
<term>Mécanisme croissance</term>
<term>Traitement thermique</term>
<term>CuInS2</term>
<term>InCl3</term>
<term>8460J</term>
<term>6855J</term>
<term>6855A</term>
<term>8115A</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">CuInS<sub>2</sub>
 thin films were deposited by chemical spray of aqueous solutions containing CuCl<sub>2</sub>
, InCl<sub>3</sub>
 and thiourea at substrate temperature of 250 °C in air and subjected to annealing at 530 °C in H<sub>2</sub>
S atmosphere. Structure and composition before and after annealing were studied by XRD, EDS, XPS and Raman spectroscopy. As-sprayed films were low-crystalline, showed uniform distribution of elements in film thickness and no oxygen content. For the CuInS<sub>2</sub>
 films deposited from the solutions with [Cu<sup>2+</sup>
]/[In<sup>3+</sup>
] = 1.0 and 1.1, H<sub>2</sub>
S treatment for 30 min increased the chalcopyrite content up to 73% and 51%, respectively. Cu<sub>x</sub>
S phase in sprayed CIS films promotes the crystallite growth but retards the formation of chalcopyrite phase during H<sub>2</sub>
S treatment.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0040-6090</s0>
</fA01>
<fA02 i1="01"><s0>THSFAP</s0>
</fA02>
<fA03 i2="1"><s0>Thin solid films</s0>
</fA03>
<fA05><s2>519</s2>
</fA05>
<fA06><s2>21</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Effect of H2S treatment on properties of CuInS2 thin films deposited by chemical spray pyrolysis at low temperature</s1>
</fA08>
<fA09 i1="01" i2="1" l="ENG"><s1>Proceedings of the EMRS 2010 Spring Meeting Symposium M: Thin Film Chalcogenide Photovoltaic Materials Strasbourg, France</s1>
</fA09>
<fA11 i1="01" i2="1"><s1>KÄRBER (E.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>KATERSKI (A.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>OJA ACIK (I.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>MIKLI (V.)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>MERE (A.)</s1>
</fA11>
<fA11 i1="06" i2="1"><s1>KRUNKS (M.)</s1>
</fA11>
<fA12 i1="01" i2="1"><s1>ROMEO (Alessandro)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="02" i2="1"><s1>SCHEER (Roland)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="03" i2="1"><s1>GUILLEMOLES (Jean François)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="04" i2="1"><s1>YAMADA (Akira)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="05" i2="1"><s1>ABOU-RAS (Daniel)</s1>
<s9>ed.</s9>
</fA12>
<fA14 i1="01"><s1>Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5</s1>
<s2>19086 Tallinn</s2>
<s3>EST</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Centre for Materials Research, Tallinn University of Technology, Ehitajate tee 5</s1>
<s2>19086 Tallinn</s2>
<s3>EST</s3>
<sZ>4 aut.</sZ>
</fA14>
<fA18 i1="01" i2="1"><s1>the European Materials Research Society (E-MRS</s1>
<s3>EUR</s3>
<s9>org-cong.</s9>
</fA18>
<fA20><s1>7180-7183</s1>
</fA20>
<fA21><s1>2011</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>13597</s2>
<s5>354000509101330130</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2011 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>21 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>11-0433222</s0>
</fA47>
<fA60><s1>P</s1>
<s2>C</s2>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Thin solid films</s0>
</fA64>
<fA66 i1="01"><s0>NLD</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>CuInS<sub>2</sub>
 thin films were deposited by chemical spray of aqueous solutions containing CuCl<sub>2</sub>
, InCl<sub>3</sub>
 and thiourea at substrate temperature of 250 °C in air and subjected to annealing at 530 °C in H<sub>2</sub>
S atmosphere. Structure and composition before and after annealing were studied by XRD, EDS, XPS and Raman spectroscopy. As-sprayed films were low-crystalline, showed uniform distribution of elements in film thickness and no oxygen content. For the CuInS<sub>2</sub>
 films deposited from the solutions with [Cu<sup>2+</sup>
]/[In<sup>3+</sup>
] = 1.0 and 1.1, H<sub>2</sub>
S treatment for 30 min increased the chalcopyrite content up to 73% and 51%, respectively. Cu<sub>x</sub>
S phase in sprayed CIS films promotes the crystallite growth but retards the formation of chalcopyrite phase during H<sub>2</sub>
S treatment.</s0>
</fC01>
<fC02 i1="01" i2="X"><s0>001D06C02D1</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B60H55J</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B80A15A</s0>
</fC02>
<fC02 i1="04" i2="X"><s0>230</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Sulfure d'hydrogène</s0>
<s2>NK</s2>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Hydrogen sulfides</s0>
<s2>NK</s2>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="X" l="FRE"><s0>Cellule solaire</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="ENG"><s0>Solar cell</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="SPA"><s0>Célula solar</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="X" l="FRE"><s0>Couche mince</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="ENG"><s0>Thin film</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="SPA"><s0>Capa fina</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="X" l="FRE"><s0>Pyrolyse</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="ENG"><s0>Pyrolysis</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="SPA"><s0>Pirólisis</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="X" l="FRE"><s0>Solution aqueuse</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="ENG"><s0>Aqueous solution</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="SPA"><s0>Solución acuosa</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="X" l="FRE"><s0>Chlorure d'indium</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="ENG"><s0>Indium chloride</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="SPA"><s0>Indio cloruro</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="X" l="FRE"><s0>Thiourées</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="ENG"><s0>Thioureas</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="SPA"><s0>Tioureas</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>Recuit</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="ENG"><s0>Annealing</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Recocido</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="X" l="FRE"><s0>Diffraction RX</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="ENG"><s0>X ray diffraction</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="SPA"><s0>Difracción RX</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE"><s0>Spectrométrie dispersive</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="ENG"><s0>Dispersive spectrometry</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA"><s0>Espectrometría dispersiva</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Spectre photoélectron RX</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>X-ray photoelectron spectra</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE"><s0>Spectrométrie Raman</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG"><s0>Raman spectrometry</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA"><s0>Espectrometría Raman</s0>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="X" l="FRE"><s0>Epaisseur couche</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="X" l="ENG"><s0>Layer thickness</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="X" l="SPA"><s0>Espesor capa</s0>
<s5>13</s5>
</fC03>
<fC03 i1="14" i2="X" l="FRE"><s0>Cristallite</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="X" l="ENG"><s0>Crystallites</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="X" l="SPA"><s0>Cristalita</s0>
<s5>14</s5>
</fC03>
<fC03 i1="15" i2="X" l="FRE"><s0>Sulfure de cuivre</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="X" l="ENG"><s0>Copper sulfide</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="X" l="SPA"><s0>Cobre sulfuro</s0>
<s5>15</s5>
</fC03>
<fC03 i1="16" i2="X" l="FRE"><s0>Sulfure d'indium</s0>
<s5>16</s5>
</fC03>
<fC03 i1="16" i2="X" l="ENG"><s0>Indium sulfide</s0>
<s5>16</s5>
</fC03>
<fC03 i1="16" i2="X" l="SPA"><s0>Indio sulfuro</s0>
<s5>16</s5>
</fC03>
<fC03 i1="17" i2="X" l="FRE"><s0>Chlorure de cuivre</s0>
<s5>17</s5>
</fC03>
<fC03 i1="17" i2="X" l="ENG"><s0>Copper chloride</s0>
<s5>17</s5>
</fC03>
<fC03 i1="17" i2="X" l="SPA"><s0>Cobre cloruro</s0>
<s5>17</s5>
</fC03>
<fC03 i1="18" i2="X" l="FRE"><s0>Thiourée</s0>
<s5>18</s5>
</fC03>
<fC03 i1="18" i2="X" l="ENG"><s0>Thiourea</s0>
<s5>18</s5>
</fC03>
<fC03 i1="18" i2="X" l="SPA"><s0>Tiourea</s0>
<s5>18</s5>
</fC03>
<fC03 i1="19" i2="X" l="FRE"><s0>Chalcopyrite</s0>
<s5>19</s5>
</fC03>
<fC03 i1="19" i2="X" l="ENG"><s0>Chalcopyrite</s0>
<s5>19</s5>
</fC03>
<fC03 i1="19" i2="X" l="SPA"><s0>Calcopirita</s0>
<s5>19</s5>
</fC03>
<fC03 i1="20" i2="X" l="FRE"><s0>Mécanisme croissance</s0>
<s5>29</s5>
</fC03>
<fC03 i1="20" i2="X" l="ENG"><s0>Growth mechanism</s0>
<s5>29</s5>
</fC03>
<fC03 i1="20" i2="X" l="SPA"><s0>Mecanismo crecimiento</s0>
<s5>29</s5>
</fC03>
<fC03 i1="21" i2="X" l="FRE"><s0>Traitement thermique</s0>
<s5>30</s5>
</fC03>
<fC03 i1="21" i2="X" l="ENG"><s0>Heat treatment</s0>
<s5>30</s5>
</fC03>
<fC03 i1="21" i2="X" l="SPA"><s0>Tratamiento térmico</s0>
<s5>30</s5>
</fC03>
<fC03 i1="22" i2="X" l="FRE"><s0>CuInS2</s0>
<s4>INC</s4>
<s5>46</s5>
</fC03>
<fC03 i1="23" i2="X" l="FRE"><s0>InCl3</s0>
<s4>INC</s4>
<s5>47</s5>
</fC03>
<fC03 i1="24" i2="X" l="FRE"><s0>8460J</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="25" i2="X" l="FRE"><s0>6855J</s0>
<s4>INC</s4>
<s5>72</s5>
</fC03>
<fC03 i1="26" i2="X" l="FRE"><s0>6855A</s0>
<s4>INC</s4>
<s5>73</s5>
</fC03>
<fC03 i1="27" i2="X" l="FRE"><s0>8115A</s0>
<s4>INC</s4>
<s5>74</s5>
</fC03>
<fN21><s1>297</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>EMRS Spring Meeting Symposium M: Thin Film Chalcogenide Photovoltaic Materials</s1>
<s2>10</s2>
<s3>Strasbourg FRA</s3>
<s4>2010-06-07</s4>
</fA30>
</pR>
</standard>
</inist>
</record>

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Main/Repository

HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 003157 | SxmlIndent | more

HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 003157 | SxmlIndent | more

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Main
   |étape=   Repository
   |type=    RBID
   |clé=     Pascal:11-0433222
   |texte=   Effect of H2S treatment on properties of CuInS2 thin films deposited by chemical spray pyrolysis at low temperature
}}

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024

	Serveur d'exploration sur l'Indium
	Attention, ce site est en cours de développement ! Attention, site généré par des moyens informatiques à partir de corpus bruts. Les informations ne sont donc pas validées.

Serveur d'exploration sur l'Indium

Effect of H2S treatment on properties of CuInS2 thin films deposited by chemical spray pyrolysis at low temperature

Effect of H2S treatment on properties of CuInS2 thin films deposited by chemical spray pyrolysis at low temperature

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri